Directory Listing
Email
rthirumalai@i2at.msstate.edu
Office
301 Research 510
Phone
(662) 325-7998
Address
301 Research Blvd.
Starkville, MS 39759
rthirumalai@i2at.msstate.edu
Office
301 Research 510
Phone
(662) 325-7998
Address
301 Research Blvd.
Starkville, MS 39759
Rooban Venkatesh
Thirumalai
Institute for Imaging & Analytical Technologies
Assistant Director
Thirumalai
Institute for Imaging & Analytical Technologies
Assistant Director
Email
rthirumalai@i2at.msstate.edu
Office
301 Research 510
Phone
(662) 325-7998
Address
301 Research Blvd.
Starkville, MS 39759
rthirumalai@i2at.msstate.edu
Office
301 Research 510
Phone
(662) 325-7998
Address
301 Research Blvd.
Starkville, MS 39759
Biography
Dr. Rooban Venkatesh K.G. Thirumalai received his PhD in Electrical Engineering from Mississippi State University in 2013 before joining the Institute for Imaging and Analytical Technologies. With over a decade of expertise in Material Characterization and Analysis he has served Researcher and Companies in and around the sate of Mississippi. As a Assistant Director his job responsibilities include overseeing research, teaching and training various equipment focusing on the XRD and electron microscopes (SEM & TEM). Dr. Thirumalai's research focuses on experimental design, implementation, and analysis of a wide variety of materials. Dr. Thirumalai has significant experience in materials characterization techniques.
Research Interest
Microscopy, Material Characterization, AI, Robotics, MEMS, Nanotechnology
Selected Publications
Total Publications: 8
Koshka, Y., Thirumalai, R.V., Krishnan, B., Levin, I., Merrett, J. N., & Davydov, A. V. (2013). Orientation, Alignment, and Polytype Control in Epitaxial Growth of SiC Nanowires for Electronics Application in Harsh Environme. Proc. SPIE 8820, Nanoepitaxy: Materials and Devices V. San Diego, California, United States. 88200M, 88200M. DOI:10.1117/12.2026938. [Document Site]
Thirumalai, R.V., Krishnan, B., Davydov, A. V., Merrett, J. N., & Koshka, Y. (2013). SiC nanowire vapor-liquid-solid growth using vapor-phase catalyst delivery. Journal of Materials Research. 28(1), 50-56. DOI:10.1557/jmr.2012.208.
Thirumalai, R.V., Krishnan, B., Davydov, A., Merrett, J. N., & Koshka, Y. (2013). Vapor-phase catalyst delivery method for growing SiC nanowires. Materials Science Forum. St. Petersburg, Russia. 740-742, 209-212.
Thirumalai, R.V., Krishnan, B., Davydov, A. V., Merrett, J. N., & Koshka, Y. (2012). Growth on differently-oriented sidewalls of SiC mesas as a way of achieving well-aligned SiC nanowires. Crystal Growth and Design. 12, 2221−.
Krishnan, B., Thirumalai, R.V., Kotamraju, S. P., Merrett, J. N., & Koshka, Y. (2012). Use of Vanadium Doping for Compensated and Semi-insulating SiC Epitaxial Layers for SiC Device Applications. Materials Science Forum. Cleveland, OH. 717-720, 133-136.
Thirumalai, R.V., Krishnan, B., Davydov, A. V., Merrett, J. N., & Koshka, Y. (2013). SiC nanowire vapor-liquid-solid growth using vapor-phase catalyst delivery. Journal of Materials Research. 28(1), 50-56. DOI:10.1557/jmr.2012.208.
Thirumalai, R.V., Krishnan, B., Davydov, A., Merrett, J. N., & Koshka, Y. (2013). Vapor-phase catalyst delivery method for growing SiC nanowires. Materials Science Forum. St. Petersburg, Russia. 740-742, 209-212.
Thirumalai, R.V., Krishnan, B., Davydov, A. V., Merrett, J. N., & Koshka, Y. (2012). Growth on differently-oriented sidewalls of SiC mesas as a way of achieving well-aligned SiC nanowires. Crystal Growth and Design. 12, 2221−.
Krishnan, B., Thirumalai, R.V., Kotamraju, S. P., Merrett, J. N., & Koshka, Y. (2012). Use of Vanadium Doping for Compensated and Semi-insulating SiC Epitaxial Layers for SiC Device Applications. Materials Science Forum. Cleveland, OH. 717-720, 133-136.
